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UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
FEATURES
*High Power Dissipation: Pc=1.5W(Ta=25) *Complementary to 2SB1151
1
TO-126C
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25)
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25 Tc=25 DC Pulse (Note 1)
SYMBOL
VCBO VCEO VEBO Ic Icp IB Pc Tj Tstg
RATING
60 60 7 5 8 1 1.5 20 150 -55 ~ +150
UNIT
V V V A A W
Junction Temperature Storage Temperature Range Note 1 :PW10ms,Duty Cycle50%
ELECTRICAL CHARACTERISTICS(Ta=25,unless otherwise specified )
CHARACTERISTIC
Collector Cut-off Current Emitter Cut-off Current DC Current Gain
SYMBOL
ICBO IEBO hFE1
TEST CONDITIONS
VCB=50V,IE=0 VEB=7V,Ic=0 VCE=1V,Ic=0.1A
MIN
TYP. MAX. UNIT
10 10 A A
60
hFE2*
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage hFE3 VCE(sat)* VBE(sat)*
VCE=1V,Ic=2A
VCE=2V,Ic=5A Ic=2A,IB=0.2A Ic=2A,IB=0.2A
160
50 0.1 0.9
400
0.3 1.2 V V
UTC
UNISONIC TECHNOLOGIES
CO. LTD
1
QW-R217-003,A
UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR
CHARACTERISTIC
Switching Time Turn On Time Storage Time Fall Time
SYMBOL
Ton Tstg Tf
IB1
TEST CONDITIONS
20sec IB1 INPUT 5 IB2 IB1=-IB2=0.2A DUTY CYCLE1% IB2 Vcc=10V OUTPUT
MIN
TYP. MAX. UNIT
0.2 1.1 0.2 1 2.5 1 s
* : Pulse test: PW50S, Duty Cycle2% Pulse
CLASSIFICATION OF hFE2
RANK RANGE O 160-320 Y 200-400
ELECTRICAL CHARACTERISTICS CURVES
Pc - Ta 25
POWER DISSIPATION Pc(W)
1
dT - Tc 160 140
Ic DERATIN dT(%)
20 15 10 5 0
1 2
Tc=Ta INFINITE HEAT SINK NO HEAT SINK
120 100 80 60 40 20
S/b Lim ited Di ss ipa ti o nL im ite d
2
0
50
100
150
200
0
0
25
50
75
100
125
150
175 200
AMBIENT TEMPERATURE Ta()
CASE TEMPERATURE Tc() REVERSE BIAS SAFE OPERATING AREA 10
COLLECTOR CURRENT Ic(A)
SAFE OPERATING AREA 10 COLLECTOR CURRENT Ic(A) 5 3
Ic(Pulse)MAX. Ic(DC)MAX.
s* 20 Di 0m ss s ip at io n Lim ite d 10 m 2m s*
8 6 4 2 0
1 0.5 0.3
VCEO (MAX.)
0.1
*SINGLE NONREPETIVE PULSE Ta=25 CURVES MUST BE DERATED LINEARLY WITH INCREASE INTEMPERATURE
s/ b
Li m ite d
1
3
5
10
30
50
100
0
20
VCEO (SUS).
40
60
80
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE(V)
UTC
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R217-003,A
UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR
Ic - VCE 10
COLLECTOR CURRENT Ic(A)
A 15 0m 10 0m A
hFE - Ic 1k 500 300 100 50 30 10 5 3 1 0.01 0.03 0.1 0.3 1 3 10
IB=80mA
IB=60m
A
DC CURRENT GAIN hFE
IB =
IB =
8 6
200 mA
VCE=2V VCE=1V
A IB=40m
A IB=30m
IB=
4 2 0
IB=20mA
IB=10mA
IB=0mA
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR-EMITTER VOLTAGE VCE(V)
COLLECTOR CURRENT Ic(A)
STATURATION VOLTAGE VBE(sat),VCE(sat) (V)
10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.01
VBE(sat),VCE(sat) - Ic Ic/IB=10 VBE(sat)
VCE(sat)
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT Ic(A)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
3
QW-R217-003,A

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